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(R)
TN805/TN815-B
SCR's
FEATURES ITRMS = 8 A VDRM = 400 V to 800 V IGT 5 mA and 15 mA DESCRIPTION The TN805/TN815-B serie of Silicon Controlled Rectifiers uses a high performance TOPGLASS PNPN technology. These parts are intended for general purpose applications using mount technology.
K A
A
G
DPAK
ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180 conduction angle) Mean on-state current (180 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C) Tc= 105C Tc= 105C tp = 8.3 ms tp = 10 ms I2t dI/dt Tstg Tj Tl I2t Value for fusing Critical rate of rise of on-state current dIG /dt = 1 A/s. IG = 100 mA Storage junction temperature range Operating junction temperature range Maximum lead temperature for soldering during 10s tp = 10ms Value 8 5 73 70 24.5 100 - 40 to + 150 - 40 to + 125 260 A2s A/s C C Unit A A A
Symbol VDRM VRRM
Parameter 400B Repetitive peak-off voltage Tj = 125C 400
TN805 or TN815 600B 600 700B 700 800B 800
Unit V
August 1998 - Ed: 1A
1/5
TN805/TN815-B
THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Parameter Junction to ambient (S=0.5cm2) Junction to case for D.C Value 70 2.5 Unit C/W C/W
GATE CHARACTERISTICS PG (AV)= 1W PGM = 10 W (tp = 20 s) IGM = 4 A (tp = 20 s) VRGM = 5 V
ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IH IL VTM IDRM IRRM dV/dt Test Conditions VD = 12V (DC) RL= 33 VD = 12V (DC) RL= 33 VD = VDRM RL = 3.3k VD = VDRM IG = 40mA IT= 150mA IG = 1.2 IGT ITM= 16A tp= 380s VDRM Rated VRRM Rated Linear slope up to VD=67%VDRM Gate open ITM = 3 x IT(AV) dIG/dt = 0.5A/us Gate open Tj= 25C Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj = 125C Tj= 125C Type MAX MAX MIN TYP MAX MAX MAX MAX MAX MIN 50 25 25 1.6 10 2 150 5 1.5 0.2 2 30 30 Value TN805 TN815 15 A V V s mA mA V A mA V/s Unit
ORDERING INFORMATION
TN
SCR CURRENT
2/5
8
05 - 600
SENSITIVITY
B
PACKAGES : B: DPAK VDRM / VRRM
TN805/815-B
Fig. 1: Maximum average power dissipation versus average on-state current . Fig. 2 : Correlation between maximum average power dissipation and maximum allowable temperatures (T amb and T case) for different thermal resistances heatsink+contact.
P(W) 8 7 6 5 4 3 2 1 0 0 1 2 IT(av)(A) 3 4 5
360
= 180 = 120 = 90 = 60 = 30
D.C.
P(W) 8 7 6 5 4
Rth=37C/W
Tcase (C)
105
Rth=0C/W
= 180
110 115 120
3 2 1 0 Tamb(C) 0 10 20 30 40 50 60 70 80 90 100 110 120 130
125
6
7
Fig. 3-1: Average and D.C. on-state current versus case temperature.
Fig. 3-2: Average and D.C. on-state current versus case temperature.
IT(av)(A) 10
D.C.
IT(av)(A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
8 6 4 2 Tcase(C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130
= 180
D.C.
= 180
Tamb(C) 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig. 4-1: Relative variation of thermal impedance versus pulse duration.
Fig. 4-2: Relative variation of thermal impedance versus pulse duration.
K=[Zth(j-c)/Rth(j-c)] 1.0
K=[Zth(j-a)/Rth(j-a)] 1.00
0.5
0.10
0.2 tp(s) 0.1 1E-3 1E-2 1E-1 1E+0
tp(s) 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
3/5
TN805/TN815-B
Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Fig. 6: Non repetitive surge peak on-state current versus number of cycles.
Igt,IH[Tj]/Ig,IH[Tj=25C] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40
80
Igt
ITSM(A) 70 60 50
Tj initial=25C F=50Hz
IH
40 30 20 10
Tj(C) -20 0 20 40 60 80 100 120
Number of cycles 1 10 100 1000
0
Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t.
Fig. 8: On-state characteristics (maximum values).
ITSM(A),It(As) 300
Tj initial=25C ITSM
ITM(A) 100.0
Tj max.: Vto=0.85V Rt=46m
100 50
It
10.0
Tj=Tj max.
Tj=25C
1.0
20 tp(ms) 10 1 2 5 10
VTM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m).
Rth(j-a) (C/W) 100 80 60 40 20 S(Cu) (cm) 0 0 2 4 6 8 10 12 14 16 18 20
4/5
TN805/815-B
PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0 Millimeters Min. Typ. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.80 1.00 0.023 8 0 Max 2.40 0.086 1.10 0.035 0.23 0.001 0.90 0.025 5.40 0.204 0.60 0.017 0.60 0.018 6.20 0.236 6.60 0.251 4.60 0.173 10.10 0.368 0.031 0.039 8 Inches Min. Typ. Max. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397
FOOT PRINT DIMENSIONS (in millimeters)
6.7
WEIGHT : 0.30g MARKING TYPE MARKING TN8 05x0 TN8 15x0
6.7
T805- x00B T815-x00B
6.7 3 1.6 2.3 2.3 1.6
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5

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